Intrinsically stretchable 2D MoS2 transistors
Summary
The article demonstrates intrinsically stretchable MoS2 transistors with high mobility that remain functional under 20% strain, due to interflake motion and van der Waals bonding. It presents a generalizable pathway for integrating van der Waals semiconductors into stretchable electronics and provides open data and supplementary materials. For business and IT applications, the work hints at future wearable devices and edge AI hardware that could enable new automation and sensor-driven workflows.