Demystifying DRAM Read Disturbance: Bridging the Gap Between Experimental Characterization and Device-Level Modeling of RowHammer and RowPress Phenomena
Summary
The paper investigates DRAM read disturbance (RowHammer and RowPress), aiming to bridge gaps between experimental observations and device-level modeling. It identifies gaps in current mechanisms, analyzes three key metrics (bitflip directions, bitflip counts, and ACmin), and uses TCAD simulations to align models with real-chip behavior, with implications for characterization and mitigation techniques.