DigiNews

Summary

Diamond Transistor describes all-diamond MOSFETs using surface transfer doping to induce charge carriers without introducing substitutional dopant atoms into the bulk. The project, developed in partnership with Stanford University, highlights hydrogen-terminated diamond surfaces, 2D hole gas conduction, and subthreshold swing performance benchmarks, positioning diamond transistors as a potential for high-power, high-frequency, and radiation-hard applications. The page covers technology stack, applications, substrates, and insights into future capabilities.