Infineon marks innovation milestone with world’s first 300-millimeter power silicon carbide (SiC) wafer
Summary
Infineon announces a milestone in power semiconductors by processing the world’s first 300-millimeter silicon carbide (SiC) wafers into functional power devices in a full-scale fab. The move promises significantly higher chip yields (2.3x more chips per wafer) and strengthens Infineon’s leadership in wide-bandgap technologies, with implications for automotive, renewables, industrial, and AI data-center applications. The company also highlights related Cold Split tech and broader investments in SiC and GaN capabilities, plus a preview of this innovation at electronica 2026.